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| Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. January 1998 Features * 2A, 50V and 60V * rDS(ON) = 0.95 * SOA is Power-Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information G PART NUMBER RFL2N05 RFL2N05 PACKAGE TO-205AF TO-205AF BRAND RFL2N05 RFL2N05 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 1497.2 5-1 RFL2N05, RFL2N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL2N05 50 50 20 2 10 8.33 0.0667 -55 to 150 300 260 RLF2N06 60 60 20 2 10 8.33 0.0667 -55 to 150 300 260 UNITS V V V A A W W/ oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0 50 60 VGS(TH) IDSS VGS = VDS , ID = 250A, (Figure 8) VDS = 0.8 x Rated BVDSS , TC = 25oC TC = 125oC 2 400 VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) 6 14 16 30 4 1 25 100 0.95 2.0 4.8 0.95 15 30 30 50 200 85 30 15 V V V A A nA V V V S ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFL2N05 RFL2N06 Gate to Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) IGSS VDS(ON) VGS = 20V, VDS = 0 ID = 1A, VGS = 10V ID = 2A, VGS = 10V ID = 4A, VGS = 15V Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC ID = 1A, VGS = 10V, (Figures 6, 7) ID = 1A, VDS = 10V, (Figure 10) ID 1A, VDD = 30V, RGS = 50, VGS = 10V, (Figures 11, 12, 13) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300s, duty cycle 2%. SYMBOL VSD trr TEST CONDITIONS ISD = 1A ISD = 2A, dISD/dt = 50A/s MIN TYP 100 MAX 1.4 UNITS V ns 5-2 RFL2N05, RFL2N06 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 Unless Otherwise Specified 2.5 2.0 1.5 0.6 0.4 1.0 0.2 0.0 0.5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10.00 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID , DRAIN CURRENT (A) 1.00 TJ = MAX RATED ID , DRAIN CURRENT (A) 10 250s PULSE TEST DUTY CYCLE 2% TC = 25oC VGS = 20V 8 6 VGS = 10V VGS = 9V 4 VGS = 8V VGS = 7V 2 VGS = 6V VGS = 5V 0.10 RFL2N05 0.01 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000 RFL2N06 0 0 1 2 3 4 5 6 VDS , DRAIN TO SOURCE VOLTAGE (V) 7 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 4 VDS = 10V 250s PULSE TEST ID, DRAIN CURRENT (A) 3 -40oC 1.4 rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () 25oC 125oC 1.2 1.0 0.8 0.6 0.4 0.2 0 VGS = 10V 250s PULSE TEST 125oC 25oC -40oC 2 1 0 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 0 1 2 3 ID , DRAIN CURRENT (A) 4 5 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 RFL2N05, RFL2N06 Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 1A VGS = 10V NORMALIZED GATE THRESHOLD VOLTAGE (V) Unless Otherwise Specified (Continued) 1.5 VGS = VDS ID = 250A 1.5 1.0 1.0 0.5 0.5 0 -50 0 50 100 150 TJ , JUNCTION TEMPERATURE (oC) 200 0 50 0 50 100 TJ , JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 240 200 C, CAPACITANCE (PF) 160 120 f = 1MHz gfs, FORWARD TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 1200 1000 800 600 400 200 0 0 VDS = 10V 80sPULSE TEST -40oC 25oC 125oC CISS 80 40 0 0 10 20 30 40 50 60 VDS , DRAIN TO SOURCE VOLTAGE (V) 70 COSS CRSS 0.5 1 1.5 2 ID, DRAIN CURRENT (A) 2.5 3 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. FORWARD TRANSCONDUCTANCE vs DRAIN CURRENT 80 BVDSS VDD = VDSS 45 VDS , VOLTS (V) GATE VDD = VDSS TO SOURCE VOLTAGE RL = 15 IG(REF) = 0.095mA VGS = 10V 0.75VDSS 0.75VDSS 0.50VDSS 0.50VDSS 0.25 VDSS 15 DRAIN TO SOURCE VOLTAGE 0 0.25VDSS 10 8 VGS , VOLTS (V) 6 30 4 2 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 5-4 RFL2N05, RFL2N06 Test Circuits and Waveforms tON td(ON) tr RL VDS 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 12. SWITCHING TIME TEST CIRCUIT FIGURE 13. RESISTIVE SWITCHING WAVEFORMS 5-5 |
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